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940nm 500mW CW VCSEL Laser Diode
  • 940nm 500mW CW VCSEL Laser Diode

940nm 500mW CW VCSEL Laser Diode


    940nm Multimode VCSEL

    High power with narrow bandwidth

    Oxide isolation technology

    116 aperture array

    Modulation bandwidth>1Gbps

    Relatively small emission area锛宔asy to collimate


鈼3D Imaging

鈼廏esture recognition

鈼廘aser illumination

鈼廙edical applications

鈼廈roadband access network

鈼廙ilitary applications

鈪.Absolute Maximum Ratings

Storage Temperature-40 to 80鈩
Case Operating Temperature-40 to 80鈩
Relative Humidity10% to 90%
Reverse Power Supply Voltage5V
Maximum Continuous Forward Current1.0A
ESD Exposure(Human Body Model)1000V
鈪.Electro-Optical Characteristics锛圱op 25 deg C unless otherwise stated锛

VCSEL ParametersConditionsSymbolUnitMin.Typ.Max.
Optical Power OutputIF=0.8APomW480500520
Threshold Current-IthA-0.1-
Slope EfficiencyPo=500mWmW/mA-0.71-
Wall Plug EfficiencyIF=0.8AWPE%-26-
Emission Area--um-371脳370-
Peak WavelengthIF=0.8A-nm930940950
Laser Forward VoltageIF=0.8AVFV2.252.352.45
Series ResistanceIF=0.8AR2.812.943.07
Beam AngleIF=0.8A-Degrees-20-
Wavelength ShiftIF=0.8A-nm/鈩-0.07-
鈪.Enviromental Specifications

Case Operating TempTop-402080
Storage TempTsto-402080
鈪.LIV Graph

鈪.Mechanical Specifications

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