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940nm 200mW VCSEL Laser Diode
  • 940nm 200mW VCSEL Laser Diode

940nm 200mW VCSEL Laser Diode


    940nm Multimode VCSEL

    Narrow spectral width

    Oxide isolation technology

    39 aperture array

    Modulation bandwidth>1Gbps

    Relatively small emission area, easy to collimate


3D Imaging

Gesture recognition

Laser illumination

Medical applications

Broadband access network

Military applications

Ⅰ.Absolute Maximum Ratings 

Storage Temperature-40 to 80℃
Case Operating Temperature-40 to 80℃
Relative Humidity10% to 90%
Reverse Power Supply Voltage5V
Maximum Continuous Forward Current0.5A
ESD Exposure(Human Body Model)1000V

Ⅱ.Electro-Optical Characteristics(Top 25 deg C unless otherwise stated) 

VCSEL ParametersConditionsSymbolUnitMin.Typ.Max.
Optical Power OutputIF=0.35APomW180200220
Threshold Current-IthA-0.05-
Slope EfficiencyPo=200mWηmW/mA-0.67-
Wall Plug EfficiencyIF=0.35AWPE%-25-
Emission Area--um-226*215-
Peak WavelengthIF=0.35A-nm930940950
Laser Forward VoltageIF=0.35AVFV-2.102.50
Series ResistanceIF=0.35ARΩ-6.007.14
Beam AngleIF=0.35A-Degrees-20-
Wavelength ShiftIF=0.35A-nm/℃-0.07-

Ⅲ.Enviromental Specifications

Case Operating TempTop-402080
Storage TempTsto-402080

Ⅳ.LIV Graph

Ⅴ.Mechanical Specifications

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