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808nm 3W CW VCSEL Laser Diode
  • 808nm 3W CW VCSEL Laser Diode

808nm 3W CW VCSEL Laser Diode

    Features:

    鈥808nm Multimode VCSEL

    鈥igh Efficiency (WPE), >35% @50C

    鈥xide Isolation Technology

    鈥odulation bandwidth >1Gbps


Applications:

鈥3D Imaging

鈥esture Recognition

鈥aser Illumincation

鈥edical applications

鈥roadband acesss nework

鈥ump


Specifications:

I. Absolute Maximum Ratings


     Parameter 
Rating 
Storage Temperature -40 to +85掳C 
Case Operating Temperature 0 to 60掳C 
Relative Humidity 5% to 90% 
Reverse Power Supply Voltage 5V 
Maximum continuous forward current 4.5 A 
ESD Exposure (Human Body Model) 1KV' 

II.Electro-Optical Characteristics (Top 25 deg C unless otherwise stated)a



     VCSEL Parameters 
Test Condition Symbol Min. Typ. Max Units Notes 
Optical Power Output IF=3.8A PO 

Threshold Current 
I TH 
800 
mA 
Slope Efficiency Po =3.8W 艐 
1.1 
mW /mA 
Wall Plug Efficiency IF=3.8A 

40 

Emission Area 


1100X1100 
um 
Peak Wavelength IF=3.8A 位P 
808 
nm 
Laser Forward Voltage IF=3.8A VF 


Series Resistance IF=3.8A Rs 
0. 16 
Ohms 
Beam Angle IF=3.8A 

20 
Degrees 



Notes:

1. Reliability is a function of temperature.

2. For the purpose of these tests, IF is DC current.

3.Slope efficiency is defined as APp/AI,. 


III. Environmental Specifications

Parameter Symbol Min Typ Max Units Ref. 
Case Operating Temperature Top 
60 掳C 
Storage Temperature Tsto -40 
85 掳C 


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